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參數(shù)資料
| 型號： | 2SC1359C |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 223K |
| 代理商： | 2SC1359C |
Transistors
1
Publication date: March 2003
SJC00102BED
2SC1359
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA0838
■ Features
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 0
0.1
A
Forward current transfer ratio *
hFE
VCB = 10 V, IE = 1 mA
70
220
Transition frequency
fT
VCB = 10 V, IE = 1 mA, f = 200 MHz
150
250
MHz
Noise figure
NF
VCB
= 10 V, I
E
= 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCB = 10 V, IE = 1 mA, f = 2 MHz
22
50
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 1 mA, f = 10.7 MHz
0.9
1.5
pF
(Common emitter)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
B
C
hFE
70 to 140
110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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