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參數(shù)資料
| 型號： | 2SC1214C-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92(1), 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC1214C-E |
2SC1214
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
4V
Collector current
I
C
500
mA
Collector power dissipation
P
C
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
50
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
V
I
C = 1 mA, RBE =
Emitter to base breakdown
voltage
V
(BR)EBO
4—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
A
V
CB = 20 V, IE = 0
DC current transfer ratio
h
FE*
60
—
320
V
CE = 3 V, IC = 10 mA
h
FE
10
—
V
CE = 3 V, IC = 500 mA
(pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
0.2
0.6
V
I
C = 150 mA, IB = 15 mA
(Pulse test)
Base to emitter voltage
V
BE
—
0.64
—
V
CE = 3 V, IC = 10 mA
Note:
1. The 2SC1214 is grouped by h
FE as follows.
BC
D
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SC1213.
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| 2SC1279SR | 50 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1310-T11-F | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1214CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1214DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1215 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1216 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1216F | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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