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參數(shù)資料
| 型號(hào)： | 2SC1050 |
| 廠(chǎng)商： | 永盛國(guó)際集團(tuán) |
| 英文描述： | 0.0033UF +/-10% 80V AXI |
| 中文描述： | 硅外延平面晶體管（一般）的說(shuō)明 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | 2SC1050 |
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors in
a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
TYP
-
-
-
-
-
-
1.5
MAX
300
250
1
UNIT
V
V
A
A
W
V
V
T
mb
I
C
= 0.5A; I
B
= 0.1A
I
F
= 0.5A
25
40
1.2
2.0
-
s
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
MAX
300
250
5
1
0.2
40
150
150
UNIT
V
V
V
A
A
W
-
-
-
Tmb
25
-55
-
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=300V
V
EB
=5V
I
C
=1mA
I
C
= 0.5A; I
B
=0.1A
I
C
= 0.3A; V
CE
= 5V
I
C
= 0.1A; V
CE
= 12V
V
CB
= 10V
TYP
-
-
250
-
30
5
50
MAX
0.2
0.2
UNIT
mA
mA
1.2
200
-
-
V
MHz
pF
us
us
us
ELECTRICAL CHARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
2SC1050
Silicon Epitaxial Planar Transistor
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| 2SC1061C | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
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