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參數(shù)資料
| 型號： | 2SB935 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 中文描述： | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | N-TYPE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | 2SB935 |
1
Power Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
For low-voltage switching
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
High-speed switching
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–40
–50
–20
–40
–5
–15
–10
35
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB935
2SB935A
2SB935
2SB935A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= –40V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –2A
I
C
= –7A, I
B
= – 0.23A
I
C
= –7A, I
B
= – 0.23A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
I
C
= –2A, I
B1
= –66mA, I
B2
= 66mA
min
–20
–40
45
90
typ
150
200
0.1
0.5
0.1
max
–50
–50
–50
260
– 0.6
–1.5
Unit
μ
A
μ
A
V
V
V
MHz
pF
μ
s
μ
s
μ
s
2SB935
2SB935A
2SB935
2SB935A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB935A | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 2SB936 | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 2SB936A | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 2SB937P | Si PNP EPITAXIAL PLANAR |
| 2SB937 | Si PNP EPITAXIAL PLANAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB935A | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial Planar Type |
| 2SB935AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB935AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB935AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB935P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-221VAR |
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