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參數(shù)資料
| 型號(hào)： | 2SB861 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨（三倍擴(kuò)散進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2SB861 |
2SB861
2
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= –50 mA, R
BE
=
∞
Collector to emitter breakdown
voltage
V
(BR)CBO
–150
—
—
V
Emitter to base breakdown
voltage
V
(BR)EBO
–6
—
—
V
I
E
= –5 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
h
FE2
V
CE(sat)
—
—
–1
μ
A
V
CB
= –120 V, I
E
= 0
V
CE
= –4 V, I
C
= –50 mA
V
CE
= –10 V, I
C
= –500 mA*
I
C
= –500 mA, I
B
= –50 mA
DC current transfer ratio
1
60
—
200
60
—
—
2
Collector to emitter saturation
voltage
—
—
–3
V
Base to emitter voltage
V
BE
Cob
—
—
–1
V
V
CE
= –4 V, I
C
= –50 mA
V
= –100 V, I
E
= 0,
f = 1 MHz
Collector output capacitance
—
30
—
pF
Notes: 1. The 2SB861 is grouped by h
FE1
as follows.
2. Pulse test
B
C
60 to 120
100 to 200
0
50
100
150
200
Ambient temperature Ta (
°
C)
Case temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
10
20
30
40
T
C
1.8 W
Ta
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
–10
Collector to emitter Voltage V
CE
(V)
C
C
–2
–5
–10 –20
–50 –100–200
Area of Safe Operation
I
C
(max)
(Continuous)
DCOeain(T
C
=2
°
C
(–60 V, –0.4 A)
(–15 V, –2 A)
(–150 V, –65 mA)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB861B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C-E | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB862 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB863 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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