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參數(shù)資料
| 型號(hào)： | 2SB857-B-T6CT |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SILICON PNP TRANSISTOR |
| 中文描述： | 硅PNP晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 54K |
| 代理商： | 2SB857-B-T6CT |
2SB857
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R217-206,C
2 of 4
ABS OLUT E MAX IMUM RAT ING
(Ta=25
PARAMETER
Collector-Base Voltages
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (I
C
Peak)
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(PEAK)
RATINGS
-130
-100
-5
-4
-8
1.5
1.9
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
W
TO-126C
TO-252
Total Power Dissipation
P
D
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
*V
CE(SAT)
I
C
=-2A, I
B
=-0.2A
*V
BE(ON)
V
CE
=-4V, I
C
=-1A
I
CBO
V
CB
=-130V, I
C
=0
*h
FE1
V
CE
=-4V, I
C
=-0.1A
*h
FE2
V
CE
=-4V, I
C
=-1A
f
T
V
CE
=-4V, I
C
=-500mA, f=100MHz
380μS, Duty Cycle
2%.
TEST CONDITIONS
I
C
=-10μA, I
E
=0
I
C
=-50mA, I
B
=0
I
E
=-10μA, I
C
=0
MIN
-130
-100
-5
35
60
TYP
15
MAX
-1
-1
-1
320
UNIT
V
V
V
V
V
μA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
DC Current Gain
Transition Frequency
Note *Pulse Test: Pulse Width
MHz
CLAS S IFICAT ION OF h
FE2
CLASSIFICATION
RANGE
B
C
D
60 ~ 120
100 ~ 200
160 ~ 320
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB857-B-TN3-K | SILICON PNP TRANSISTOR |
| 2SB857-B-TN3-R | SILICON PNP TRANSISTOR |
| 2SB857-B-TN3-T | SILICON PNP TRANSISTOR |
| 2SB857-C-T6CK | SILICON PNP TRANSISTOR |
| 2SB857-C-T6CR | SILICON PNP TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB857-B-TN3-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-B-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-B-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB857C(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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