- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371492 > 2SB779 (PANASONIC CORP) Silicon PNP epitaxial planer type(For low-frequency output amplification) PDF資料下載
參數(shù)資料
| 型號： | 2SB779 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency output amplification) |
| 中文描述： | 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SB779 |
1
Transistor
2SB779
Silicon PNP epitaxial planer type
For low-frequency output amplification
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Satisfactory linearity of h
FE
at the low collector voltage.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–25
–20
–7
–1
– 0.5
200
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –25V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= –0.5A
*2
V
CE
= –2V, I
C
= –1A
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–25
–20
–7
90
25
typ
– 0.2
150
15
max
–100
–1
220
– 0.4
–1.2
Unit
nA
μ
A
V
V
V
V
V
MHz
pF
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
90 ~ 155
130 ~ 220
Marking Symbol
1AQ
1AR
Marking symbol
: 1A
*2
Pulse measurement
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB788 | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
| 2SB789 | Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
| 2SD968 | Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
| 2SD968A | Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
| 2SB789A | Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB779Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SB779R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SB782 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -60V -4A 30W BCE |
| 2SB786 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR TO-126M -40V -2A 5W ECB |
| 2SB786F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。