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參數(shù)資料
| 型號(hào)： | 2SB772 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 中文描述： | 中功率低電壓晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SB772 |
UTC 2SB772
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R204-002,A
CLASSIFICATION OF hFE2
RANK
RANGE
TYPICAL PERFORMANCE CHARACTERISTICS
Q
P
E
100-200
160-320
200-400
Fig.1 Static characteristics
-Collector-Emitter voltage(V)
-
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
Tc,Case Temperature(°C)
-IB=1mA
-IB=2mA
-IB=3mA
-IB=4mA
-IB=5mA
-IB=6mA
-IB-IB=7mA
-IB=9mA
Fig.2 Derating curve of safe
operating areas
-
200
150
100
50
0
-50
0
50
100
150
Sblmted
Dsspaionlmted
Tc,Case Temperature(°C)
200
150
100
50
0
-50
Fig.3 Power Derating
P
0
4
8
12
Fig.4 Collector Output
capacitance
-Collector-Base Voltage(v)
O
100
10-1
10-2
10-3
101
102
103
100
I
E
=0
f=1MHz
Fig.5 Current gain-
bandwidth product
F
T
(
b
101
102
103
100
V
CE
=5V
Collector-Emitter Voltage
-
Fig.6 Safe operating area
Ic(max),DC
Ic(max),Pulse
10mS
1mS
01mS
Ic,Collector current(A)
Fig.7 DC current gain
-Ic,Collector current(mA)
-Ic,Collector current(mA)
Fig.8 Saturation Voltage
D
101
102
103
100
-
V
CE
=-2V
V
CE
(sat)
V
BE
(sat)
10-2
10-1
100
101
10-2
10-1
100
101
100
101
102
100
101
102
103
104
100
101
102
103
104
100
101
102
103
104
I
B
=8mA
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SB772_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:PNP medium power transistor |
| 2SB772_1111 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
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| 2SB772-AZ(P) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB772AZ-E | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
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