參數(shù)資料
型號： 2SB772-GR-BP
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 功率晶體管
英文描述： 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 292K
代理商： 2SB772-GR-BP
2SB772
-R
PNP Silicon
Plastic-Encapsulate
Transistor
Features
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V (BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
30
---
Vdc
V (BR)CBO
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
40
---
Vdc
V (BR)EBO
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
5.0
---
Vdc
I CBO
Collector Cutoff Current
(V CB=40Vdc, IE=0)
---
1.0
uAdc
ICEO
Collector Cutoff Current
(V CE=30Vdc, IB=0)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(V EB=6.0Vdc, IC=0)
---
1.0
uAdc
ON CHARACTERISTICS
h FE(1)
DC Current Gain
(IC=1.0Adc, VCE=2.0Vdc)
60
400
---
h FE(2)
DC Current Gain
(IC=100mAdc, VCE=2.0Vdc)
32
---
V CE(sat)
Collector-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc)
---
0.5
Vdc
V BE(sat)
Base-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc)
---
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
f T
Transistor Frequency
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz)
50
---
MHz
CLASSIFICATION OF HFE (1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2