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參數(shù)資料
| 型號(hào)： | 2SB710A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 85K |
| 代理商： | 2SB710A |
Transistors
2SB0710
(2SB710)
, 2SB0710A
(2SB710A)
Silicon PNP epitaxial planar type
1
Publication date: May 2003
SJC00048CED
For general amplification
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
■
Features
Large collector current I
C
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0710
V
CBO
30
60
25
50
5
0.5
1
V
2SB0710A
Collector-emitter voltage 2SB0710
(Base open)
V
CEO
V
2SB0710A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Note) The part numbers in the parenthesis show conventional part number.
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
(Emitter open)
2SB0710
V
CBO
I
C
=
10
μ
A, I
E
=
0
30
60
25
50
5
V
2SB0710A
Collector-emitter voltage
(Base open)
2SB0710
V
CEO
I
C
=
10 mA, I
B
=
0
V
2SB0710A
Emitter-base voltage (Collector open)
V
EBO
I
CBO
h
FE1
*2
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
0.1
μ
A
85
340
h
FE2
V
CE(sat)
40
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
0.35
1.1
0.60
1.5
V
V
BE(sat)
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
6
15
pF
Marking Symbol:
2SB0710: C
2SB0710A: D
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking
symbol
2SB0710
CQ
CR
CS
C
2SB0710A
DQ
DR
DS
D
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Product of no-rank is not
classified and have no
marking symbol for rank.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0726 | For general amplification |
| 2SB0745 | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SD661A | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SB745 | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB710AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236 |
| 2SB710A-Q-TX | 制造商:Panasonic Industrial Company 功能描述: |
| 2SB710AR | 制造商:NEC 功能描述:2SB710AR |
| 2SB710A-RS | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB710AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236 |
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