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參數(shù)資料
| 型號(hào)： | 2SB649A-X-AB3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 中文描述： | 雙極晶體管權(quán)力的一般用途 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | 2SB649A-X-AB3-R |
2SB649/A
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-006,D
ABS OLUT E MAX IMUM RAT ING
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
RATING
-180
-120
-160
-5
-1.5
-3
1.4
1
500
+150
-40 ~ +150
UNIT
V
Collector-Base Voltage
2SB649
2SB649A
Collector-Emitter Voltage
V
CEO
V
Emitter-Base Voltage
Collector Current
Collector Peak Current
V
EBO
I
C
l
C(PEAK)
V
A
A
W
W
mW
°
C
°
C
TO-126/TO-126C
TO-92
SOT-89
Collector Power Dissipation
P
D
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
TEST CONDITIONS
I
C
=-1mA, I
E
=0
MIN
-180
-120
-160
-5
60
30
60
30
TYP MAX UNIT
-10
320
200
-1
-1.5
140
27
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
V
2SB649
2SB649A
BV
CEO
I
C
=-10mA, R
BE
=
∞
V
BV
EBO
I
CBO
h
FE1
h
FE2
h
FE1
h
FE2
V
CE(SAT)
Ic=-600mA, I
B
=-50mA
V
BE
V
CE
=-5V, I
C
=-150mA
f
T
V
CE
=-5V,I
C
=-150mA
Cob
V
CB
=-10V, I
E
=0, f=1MHz
I
E
=-1mA, I
C
=0
V
CB
=-160V, I
E
=0
V
CE
=-5V, I
C
=-150mA (note)
V
CE
=-5V, I
C
=-500mA (note)
V
CE
=-5V, I
C
=-150mA (note)
V
CE
=-5V, I
C
=-500mA (note)
V
μ
A
2SB649
DC Current Gain
2SB649A
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test.
V
V
MHz
pF
CLAS S IFICAT ION OF h
FE
RANK
RANGE
B
C
D
60-120
100-200
160-320
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB649A-X-T60-K | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-X-T6C-K | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-X-T92-B | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-X-T92-K | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649-B-AB3-B | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB649A-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-X-T6C-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-X-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-X-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 |
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