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參數(shù)資料
| 型號(hào)： | 2SB566K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | 2SB566K |
2SB566(K), 2SB566A(K)
Silicon PNP Triple Diffused
Application
Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
123
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
2SB566(K)
2SB566A(K)
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
–70
–70
V
Collector to emitter voltage
–50
–60
V
Emitter to base voltage
–5
–5
V
Collector current
–4
–4
A
Collector peak current
–8
–8
A
Collector power dissipation
40
40
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C.
Tstg
–55 to +150
–55 to +150
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PDF描述 |
|---|---|
| 2SB566 | Power Bipolar Transistors |
| 2SB566A | Power Bipolar Transistors |
| 2SB632 | PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V，2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管) |
| 2SB646 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
| 2SB646A | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB568 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -200V -2A 30W BCE |
| 2SB591 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
| 2SB591A | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
| 2SB592 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
| 2SB592A | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
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