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參數(shù)資料
| 型號(hào)： | 2SB566(K)B |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB566(K)B |
2SB566(K), 2SB566A(K)
2
Electrical Characteristics (Ta = 25°C)
2SB566(K)
2SB566A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70
—
–70
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
—
–60
—
V
I
C = –50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
——–1—
—
–1
AV
CB = –50 V, IE = 0
DC current tarnsfer ratio h
FE1*
1
60
—
200
60
—
200
V
CE = –4 V, IC = –1 A
h
FE2
35
—
35
—
V
CE = –4 V, IC = –0.1 A
Collector to emitter
saturation voltage
V
CE(sat)
—
–1.0
—
–1.0
V
I
C = –2 A, IB = –0.2 A
Base to emitter
saturation voltage
V
BE(sat)
—
–1.2
—
–1.2
V
I
C = –2 A, IB = –0.2 A
Gain bandwidth product f
T
—
15
—
15
—
MHz
V
CE = –4 V, IC = –0.5 A
Turn on time
t
on
—
0.3
—
0.3
—
sV
CC = –10.5 V
Turn off time
t
off
—
3.0
—
3.0
—
sI
C = 10IB1 = –10IB2 =
Storage time
t
stg
—
2.5
—
2.5
—
s
–0.5 A
Note:
1. The 2SB566(K) and 2SB566A(K) are grouped by h
FE1 as follows.
BC
60 to 120
100 to 200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB566A(K)C | POWER TRANSISTOR, TO-220AB |
| 2SB566A(K)B | POWER TRANSISTOR, TO-220AB |
| 2SB601-K | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB601-L | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB601-AZ | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB568 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -200V -2A 30W BCE |
| 2SB591 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
| 2SB591A | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
| 2SB592 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
| 2SB592A | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
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