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參數(shù)資料
| 型號(hào)： | 2SB562 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | 2SB562 |
2SB562
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
0.4
0.8
1.2
50
Ambient Temperature Ta (°C)
Collector
Power
Dissipation
P
C
(W)
Maximum Collector Dissipation Curve
100
150
0
–800
–600
–400
–200
–1,000
–0.4
–0.8
–1.2
–1.6
–2.0
Collector Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics
–1 mA
P
C =
0.9
W
–2
–3
–4
–5
–6
–7
–8
IB = 0
0
–300
–100
–10
–30
–3
–1
–1,000
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
Ta = 75
°C
VCE = –2 V
25
°C
–1
1,000
300
100
30
10
3,000
–3
–10
–30
–100
–300
–1,000
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
DC Current Transfer Ratio vs.Collector Current
Ta = 75
°C
VCE = –2 V
Pulse
25
°C
0
–0.20
–0.15
–0.10
–0.05
–0.25
–3
–1
–10
–30
–100 –300 –1,000
Collector Current IC (mA)
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
IC = 10 IB
Pulse test
Ta = 75
°C
25
°C
0
–0.8
–0.6
–0.4
–0.2
–1.0
–3
–1
–10
–30
–100
Base Current IB (mA)
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
vs. Base Current
I C
=
–500
mA
–800
mA
Pulse test
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| 2SB566A(K)B | POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB562B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB562BTZ-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB562C | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB562CTZ-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB563 | 制造商:SAVANTIC 制造商全稱(chēng):Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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