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參數(shù)資料
| 型號： | 2SB561C |
| 英文描述： | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 700MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 20V的五（巴西）總裁| 700mA的一（c）|至92 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 29K |
| 代理商： | 2SB561C |
2SB566(K), 2SB566A(K)
Silicon PNP Triple Diffused
ADE-208-855 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SB566(K)
2SB566A(K)
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
–60
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–4
A
Collector peak current
I
C(peak)
–8
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
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| 2SB562B | 4-Pin, Ultra Low-Voltage, Low-Power µP Reset Circuits with Manual Reset |
| 2SB562C | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB564K | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB564L | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB564M | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB561CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB562 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SB562B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB562BTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB562C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
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