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參數(shù)資料
| 型號： | 2SB1643 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | N-TYPE PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 174K |
| 代理商： | 2SB1643 |
1
Power Transistors
2SB1643
Silicon PNP epitaxial planar type
For power amplification
s Features
q
High collector to emitter VCEO
q
High collector power dissipation PC
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
–60
–6
–3
–1
40
1.3
150
–55 to +150
Unit
V
A
W
C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
ICEO
IEBO
VCEO
hFE
*
VCE(sat)
fT
Conditions
VCB = –60V, IE = 0
VEB = –40V, IC = 0
VEB = –6V, IC = 0
IC = –25mA, IB = 0
VCE = –4V, IC = – 0.5A
IC = –2A, IB = – 0.05A
VCE = –12V, IC = – 0.2A, f = 10MHz
min
–60
300
typ
30
max
–100
700
–1
Unit
A
V
MHz
*h
FE Rank classification
Rank
Q
P
hFE
300 to 500
400 to 700
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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