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參數(shù)資料
| 型號(hào)： | 2SB1565F |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220FN |
| 封裝： | TO-220FN, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2SB1565F |
2SB1565
Transistors
Power Transistor (
60V, 3A)
2SB1565
!
!Features
1) Low VCE(sat). (Typ.
0.3V at IC/IB = 2/0.2A)
2) Excellent DC current gain characteristics.
3) Wide SOA (safe operating area).
!External dimensions
(Units : mm)
ROHM : TO-220FN
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
0.75
0.8
2.54
(1)
(3)
(2)
(1)
2.54
(3)
(2)
5.0
8.0
14.0
15.0
12.0
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
80
60
7
3
2
25
150
55~+150
Unit
V
A (DC)
W
W (Tc = 25
°C)
6
*
A (Pulse)
°C
* Single pulse Pw = 100ms
!
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1565
TO-220FN
EF
500
!
!Electrical characteristics
(Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage
Transition frequency
Output capacitance
* Measured using pulse current.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VBE(sat)
fT
Cob
80
60
7
15
50
10
1.5
V
A
V
MHz
pF
IC =
50A
IC =
1mA
IE =
50A
VCB =
60V
VEB =
7V
IC/IB =
2A/0.2A
Collector-emitter saturation voltage
1.5
V
IC/IB =
2A/0.2A
VCE(sat)
*
DC current transfer ratio
100
320
VCE/IC =
5V/0.5A
hFE
VCE =
5V , IE = 0.5A , f = 5MHz
VCB =
10V , IE = 0A , f = 1MHz
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