- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30507 > 2SB1416Q (PANASONIC CORP) 3 A, 60 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB1416Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 238K |
| 代理商： | 2SB1416Q |
2SC4738
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 120~700
Complementary to 2SA1832
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
120
700
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Note: hFE classification Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1416P | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1419 | 12 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1528 | 12 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SD1831 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2327 | 12 A, 160 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB14170JA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB14170QA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1417APA | 功能描述:TRANS PNP LF 80VCEO 3A MT-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1417PQTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1417PTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。