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參數(shù)資料
| 型號(hào)： | 2SB1260-P-TN3-B |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 功率晶體管 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SB1260-P-TN3-B |
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R208-017,C
T Y PICAL CHARACT ERICS (Cont.)
-0.5
-1
-2
-0.05
Collector to Emitter Voltage, V
CE
(V)
Safe Operating Area
C
-5
-10 -20
-50
-0.1
-0.2
-100
1000
-0.1
20
Emitter To Base Voltage, V
EB
(V)
Emitter Input Capacitance vs. Emitter-
Base Voltage
E
50
-0.2
-0.5
-2
-5
-1
100
200
-10
500
I
c
=0A
-0.5
-1
-2
Ta=25
f=1MHz
PW1m
PW=00ms
DC
Ta=25
*Single pulse
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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| 2SB1260-P-TN3-K | POWER TRANSISTOR |
| 2SB1260-P-TN3-R | POWER TRANSISTOR |
| 2SB1260-Q-AB3-B | POWER TRANSISTOR |
| 2SB1260-Q-AB3-K | POWER TRANSISTOR |
| 2SB1260-Q-AB3-R | POWER TRANSISTOR |
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