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參數(shù)資料
| 型號(hào)： | 2SB1198L-R-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 244K |
| 代理商： | 2SB1198L-R-AE3-R |
2SB1198
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-040,B
ABSOLUTE MAXIMUM RATING ( Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-0.5
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Breakdown Voltage
BVCBO
IC= -50μA
-80
V
Collector Emitter Breakdown Voltage
BVCEO
IC= -2mA
-80
V
Emitter Base Breakdown Voltage
BVEBO
IE= -50μA
-5
V
Collector Cut-Off Current
ICBO
VCB= -50V
-0.5
μA
Emitter Cut-Off Current
IEBO
VEB= -4V
-0.5
μA
Collector-Emitter Saturation Voltage
VCE(sat)
IC/IB= -0.5A/-50mA
-0.2
-0.5
V
DC Current Transfer Ratio
hFE
VCE= -3V, IC= -0.1A
120
390
Transition Frequency
fT
VCE=-10V, IE= 50 mA, f=100MHz
180
MHz
Output Capacitance
Cob
VCB= -10V, IE= 0 A, f=1MHz
11
pF
CLASSIFICATION OF hFE
RANK
Q
R
RANGE
120-270
180-390
MARKING
AKQ
AKR
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| 2SB1201S-E | 功能描述:兩極晶體管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1201S-TL-E | 功能描述:兩極晶體管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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