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參數(shù)資料
| 型號(hào)： | 2SB1198G-R-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 244K |
| 代理商： | 2SB1198G-R-AE3-R |
2SB1198
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-040,B
ABSOLUTE MAXIMUM RATING ( Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-0.5
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Breakdown Voltage
BVCBO
IC= -50μA
-80
V
Collector Emitter Breakdown Voltage
BVCEO
IC= -2mA
-80
V
Emitter Base Breakdown Voltage
BVEBO
IE= -50μA
-5
V
Collector Cut-Off Current
ICBO
VCB= -50V
-0.5
μA
Emitter Cut-Off Current
IEBO
VEB= -4V
-0.5
μA
Collector-Emitter Saturation Voltage
VCE(sat)
IC/IB= -0.5A/-50mA
-0.2
-0.5
V
DC Current Transfer Ratio
hFE
VCE= -3V, IC= -0.1A
120
390
Transition Frequency
fT
VCE=-10V, IE= 50 mA, f=100MHz
180
MHz
Output Capacitance
Cob
VCB= -10V, IE= 0 A, f=1MHz
11
pF
CLASSIFICATION OF hFE
RANK
Q
R
RANGE
120-270
180-390
MARKING
AKQ
AKR
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SB1198G-X-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP TRANSISTOR |
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| 2SB1198KP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-59 |
| 2SB1198KQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-59 |
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