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參數資料
| 型號： | 2SB1169AP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 4 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 241K |
| 代理商： | 2SB1169AP |
Power Transistors
1
Publication date: April 2003
SJD00045AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB1169
VCEO
IC = 30 mA, IB = 0
60
V
(Base open)
2SB1169A
80
Base-emitter voltage
VBE
VCE = 4 V, IC = 1 A
1.3
V
Collector-emitter cutoff
2SB1169
ICES
VCE = 60 V, VBE = 0
200
A
current (E-B short)
2SB1169A
VCE
= 80 V, V
BE
= 0
200
Collector-emitter cutoff
2SB1169
ICEO
VCE = 30 V, IB = 0
300
A
current (Base open)
2SB1169A
VCE = 60 V, IB = 0
300
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
1mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 0.2 A
40
450
hFE2
VCE = 4 V, IC = 1 A
15
Collector-emitter saturation voltage
VCE(sat)
IC
= 1 A, I
B
= 0.125 A
1V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
40
MHz
Turn-on time
ton
IC = 1 A, IB1 = 50 mA, IB2 = 50 mA
0.5
s
Strage time
tstg
VCC
= 50 V
1.2
s
Fall time
tf
0.3
s
2SB1169, 2SB1169A
Silicon PNP epitaxial planar type
For power amplification
■ Features
High forward current transfer ratio h
FE which has satisfactory linearity
Low collector-emitter saturation voltage V
CE(sat)
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
7.0±0.3
3.5±0.2
0 to 0.15
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0 to 0.15
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit : mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB1169
VCBO
60
V
(Emitter open)
2SB1169A
80
Collector-emitter voltage 2SB1169
VCEO
60
V
(Base open)
2SB1169A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
2A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 +150
°C
Rank
R
Q
P
O
hFE1
40 to 90
70 to 150
120 to 250
200 to 450
Note) Self-supported type package is also prepared.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1169AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB1169AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB1169O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB1169P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB1169Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-221VAR |
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