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參數(shù)資料
| 型號： | 2SB1169A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For power amplification |
| 中文描述： | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 75K |
| 代理商： | 2SB1169A |
Power Transistors
2SB1169, 2SB1169A
Silicon PNP epitaxial planar type
1
Publication date: April 2003
SJD00045AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB1169
V
CEO
I
C
=
30 mA, I
B
=
0
60
80
V
2SB1169A
Base-emitter voltage
V
BE
I
CES
V
CE
=
4 V, I
C
=
1 A
V
CE
=
60 V, V
BE
=
0
V
CE
=
80 V, V
BE
=
0
V
CE
=
30 V, I
B
=
0
V
CE
=
60 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
4 V, I
C
=
0.2 A
V
CE
=
4 V, I
C
=
1 A
I
C
=
1 A, I
B
=
0.125 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
1.3
200
200
300
300
1
V
Collector-emitter cutoff
current (E-B short)
2SB1169
μ
A
2SB1169A
Collector-emitter cutoff
current (Base open)
2SB1169
I
CEO
μ
A
2SB1169A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
*
h
FE2
mA
Forward current transfer ratio
40
450
15
Collector-emitter saturation voltage
V
CE(sat)
1
V
Transition frequency
f
T
t
on
40
MHz
Turn-on time
I
C
=
1 A, I
B1
=
50 mA, I
B2
=
50 mA
V
CC
=
50 V
0.5
μ
s
μ
s
μ
s
Strage time
t
stg
1.2
Fall time
t
f
0.3
For power amplification
■
Features
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector-emitter saturation voltage V
CE(sat)
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
7.0
±
0.3
3.5
±
0.2
0 to 0.15
1
±
0
7
±
0
2
±
0
2
±
0
(
(
1
±
0
3.0
±
0.2
2.0
±
0.2
1.1
±
0.1
0.75
±
0.1
0.9
±
0.1
0 to 0.15
0.4
±
0.1
2.3
±
0.2
4.6
±
0.4
1
2
3
Unit : mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB1169
V
CBO
60
80
60
80
5
1
2
V
2SB1169A
Collector-emitter voltage
(Base open)
2SB1169
V
CEO
V
2SB1169A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power dissipation
P
C
15
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55
～ +
150
Rank
R
Q
P
O
h
FE1
40 to 90
70 to 150
120 to 250
200 to 450
Note) Self-supported type package is also prepared.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1169AO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB1169AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB1169AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB1169AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SB1169O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-221VAR |
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