參數(shù)資料
型號(hào)： 2SB1124-S
元件分類： 小信號(hào)晶體管
英文描述： 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PCP, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 96K
代理商： 2SB1124-S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High Current Switching Applications
Ordering number:ENN2019A
2SB1124/2SD1624
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019—1/4
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( ) : 2SB1124
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2038A
[2SB1124/2SD1624]
Applications
Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Mounted on ceramic board (250mm
2×0.8mm)
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Marking 2SB1124 : BG
Continued on next page.
2SD1624 : DG
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相關(guān)PDF資料
PDF描述
2SB1124-U 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1124S-TD-E 功能描述:兩極晶體管 - BJT BIP PNP 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1124S-TD-H 功能描述:兩極晶體管 - BJT BIP PNP 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1124T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SOT-89
2SB1124T-TD-E 功能描述:兩極晶體管 - BJT LOW-SATURATION VOLTAGE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1124T-TD-H 功能描述:兩極晶體管 - BJT BIP PNP 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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