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參數(shù)資料
| 型號： | 2SB1122R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, PCP, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 2SB1122R |
2SB1122 / 2SD1622
No.2040-1/5
Applications
Voltage regulators relay drivers, lamp drivers, electrical equipment.
Features
Adoption of FBET process.
Ultrasmall size making it easy to provide high-density hybrid IC’s.
Specifications ( ) : 2SB1122
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
500
mW
Mounted on a ceramic board (250mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)50V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
Marking 2SB1122 : BE
2SD1622 : DE
Continued on next page.
www.semiconductor-sanyo.com/network
Ordering number : EN2040B
31710EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SB1122 / 2SD1622
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency Power Amplifier Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1122-T | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1622-S | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1622R | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1122-U | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1622-S | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1122S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SOT-89 |
| 2SB1122S-TD-E | 功能描述:兩極晶體管 - BJT BIP PNP 1A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1122T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SOT-89 |
| 2SB1122T-TD-E | 功能描述:兩極晶體管 - BJT BIP PNP 1A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1122U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SOT-89 |
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