參數(shù)資料
型號(hào): 2SB1104
元件分類: 功率晶體管
英文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 38K
代理商: 2SB1104
2SB1103, 2SB1104
2
Electrical Characteristics (Ta = 25
GC)
2SB1103
2SB1104
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
–60
–80
V
I
C = –25 mA, RBE = B
Emitter to base
breakdown voltage
V
(BR)EBO
–7
–7
V
I
E = –50 mA, IC = 0
Collector cutoff current
I
CBO
–100
–100
2AV
CB = –60 V, IE = 0
I
CEO
–10
–10
2AV
CE = –50 V, RBE = B
DC current tarnsfer
ratio
h
FE
1000 —
20000
1000 —
20000
V
CE = –3 V, IC = –4
A*
1
Collector to emitter
saturation voltage
V
CE(sat)1
——–1.5
V
I
C = –4 A, IB = –8
mA*
1
V
CE(sat)2
——–3.0
I
C = –8 A, IB = –80
mA*
1
Base to emitter
saturation voltage
V
BE(sat)1
——–2.0
V
I
C = –4 A, IB = –8
mA*
1
V
BE(sat)2
——–3.5
I
C = –8 A, IB = –80
mA*
1
C to E diode forward
voltage
V
D
3.0
3.0
V
I
D = 8 A*
1
Turn on time
t
on
0.5
0.5
2sI
C = –4 A,
Storage time
t
stg
3.0
3.0
I
B1 = –IB2 = –8 mA
Fall time
t
f
1.0
1.0
Note:
1. Pulse Test.
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
Area of Safe Operation
–10
–3
–1.0
–0.3
Collector
current
I
C
(A)
–0.1
–0.03
–3
–10
–100
–30
–300
Collector to emitter voltage VCE (V)
Ta = 25
°C
1 Shot Pulse
iC(peak)
1
s
IC(max)
DC
Operation(T
C =
25
°C)
PW
=
10
ms
1 ms
100
s
2S
B1103
2S
B1104
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