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參數(shù)資料
| 型號： | 2SB1103 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重擴散硅進步黨 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SB1103 |
2SB1103
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
–60
V
Collector to emitter voltage
–60
V
Emitter to base voltage
–7
V
Collector current
–8
A
Collector peak current
–12
A
Collector power dissipation
40
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
C to E diode forward current
Note:
1. Value at T
C
= 25
°
C.
I
D
*
1
8
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
—
—
V
I
C
= –25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
—
—
–100
μ
A
μ
A
V
CB
= –60 V, I
E
= 0
V
CE
= –50 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –4 A*
1
I
C
= –4 A, I
B
= –8 mA*
1
—
—
–10
DC current tarnsfer ratio
1000
—
20000
Collector to emitter saturation
voltage
—
—
–1.5
V
V
CE(sat)2
V
BE(sat)1
—
—
–3.0
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B
= –8 mA*
1
Base to emitter saturation
voltage
—
—
–2.0
V
V
BE(sat)2
V
D
t
on
t
stg
t
f
—
—
–3.5
I
C
= –8 A, I
B
= –80 mA*
1
I
D
= 8 A*
1
I
C
= –4 A,
I
B1
= –I
B2
= –8 mA
C to E diode forward voltage
—
—
3.0
V
Turn on time
—
0.5
—
μ
s
Storage time
—
3.0
—
Fall time
Note:
—
1.0
—
1. Pulse Test.
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