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參數(shù)資料
| 型號： | 2SB1073R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 232K |
| 代理商： | 2SB1073R |
Transistors
1
Publication date: March 2004
SJC00068DED
2SB1073
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Large peak collector current I
CP
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
4A
Peak collector current
ICP
7A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
120 to 205
180 to 315
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
Marking Symbol: I
4.5±0.1
3.0±0.15
45
2.6
±
0.1
0.4
max.
1.6±0.2
1.5±0.1
4.0
2.5
±
0.1
3
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08
0.4±0.04
0.4±0.08
12
3
1.5±0.1
3
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emiter open)
VCBO
IC = 10 A, IE = 0
30
V
Collector-emitter voltage (Base open)
VCEO
IC
= 1 mA, I
B
= 0
20
V
Emiter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 30 V, IE = 0
0.1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 7 V, I
C
= 0
0.1
A
Forward current transfer ratio *
1, 2
hFE
VCE = 2 V, IC = 2 A
120
315
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 3 A, IB = 0.1 A
0.6
1.0
V
Transition frequency
fT
VCB
= 6 V, I
E
= 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
40
pF
(Common base, input open circuited)
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1073-R | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Silicon PNP epitaxial planer Transistors |
| 2SB1073TX | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1075 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1076M | 制造商: 功能描述:Bipolar Junction Transistor, Darlington, PNP Type, SIP |
| 2SB1077 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -60V -4A 30W BCE |
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