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參數(shù)資料
| 型號(hào)： | 2SB1072 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | 2SB1072 |
2SB1072(L), 2SB1072(S)
3
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
Case temperature T
C
(
°
C)
150
C
C
Area of Safe Operation
Collector to emitter voltage V
CE
(V)
i
C(peak)
I
C(max)
PW=1 m
1m
10
μ
s
D(
C
5
°
C
Ta = 25
°
C
1 Shot Pulse
–1
–5
–2
–20
–100
–10
–50
C
C
1
μ
s
20
10
–3
–1.0
–0.3
–0.1
–0.03
I
B
= –0.3 mA
–0.4
–0.5
–0.6
–0.9
–1.0
Typical Output Characteristics
–5
–4
–3
–2
–1
0
–2
–4
Collector to emitter voltage V
CE
(V)
–6
–8
–10
C
C
P
C
= 20 W
V
CE
= –3 V
DC Current Transfer Ratio
vs. Collector Current
30000
10000
3000
1000
300
100
30
–0.1
–0.3
Collector current I
C
(A)
D
F
–1.0
–10
–3
T
C
= 75
°
C
T
C
= –25
°
C
T
C
= 25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1072L | Silicon PNP Triple Diffused |
| 2SB1072S | Silicon PNP Triple Diffused |
| 2SB1076M | Epitaxial Planar PNP Silicon Darlington Transistors |
| 2SB1077 | LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
| 2SB1079 | Silicon PNP Triple Diffused |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1072(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-251AA |
| 2SB1072(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252AA |
| 2SB1072L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused |
| 2SB1072S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused |
| 2SB1073 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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