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參數(shù)資料
| 型號： | 2SB1012K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(外延PNP晶體管) |
| 中文描述： | 硅外延進步黨（外延進步黨晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SB1012K |
2SB1012(K)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
Tj
–120
V
Collector to emitter voltage
–120
V
Emitter to base voltage
–7
V
Collector current
–1.5
A
Collector peak current
–3.0
A
Collector power dissipation
1
20
W
Junction temperature
150
°
C
°
C
A
Storage temperature
Tstg
–55 to +150
C to E diode forward current
Note:
1. Value at T
C
= 25
°
C
I
D
*
1
1.5
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= –10 mA, R
BE
=
∞
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
—
V
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
—
—
–100
μ
A
μ
A
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –1 A*
I
C
= –1 A, I
B
= –1 mA*
—
—
–10
DC current transfer ratio
2000
—
30000
1
Collector to emitter saturation
voltage
—
—
–1.5
V
1
V
CE(sat)2
V
BE(sat)1
—
—
–2.0
V
I
C
= –1.5 A, I
B
= –1.5 mA*
I
C
= –1 A, I
B
= –1 mA*
1
Base to emitter saturation
voltage
—
—
–2.0
V
1
V
BE(sat)2
V
D
t
on
t
off
—
—
–2.5
V
I
C
= –1.5 A, I
B
= –1.5 mA*
I
D
= 1.5 A*
I
C
= –1 A, I
B1
= –I
B2
= –1 mA
1
C to E diode forward voltage
—
—
3.0
V
1
Turn on time
—
0.5
—
μ
s
μ
s
Turn off time
Note:
—
2.0
—
1. Pulse test
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參數(shù)描述 |
|---|---|
| 2SB1015 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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