- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371486 > 2SB1011 (PANASONIC CORP) Silicon PNP triple diffusion planar type PDF資料下載
參數(shù)資料
| 型號： | 2SB1011 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP triple diffusion planar type |
| 中文描述： | 0.1 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2SB1011 |
Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
1
Publication date: March 2003
SJD00036BED
For low-frequency output amplification
■
Features
High collector-base voltage (Emitter open) V
CBO
High collector-emitter voltage (Base open) V
CEO
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
400
400
5
100
200
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
mA
Peak collector current
I
CP
mA
Collector power dissipation
P
C
T
j
1.2
W
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
3.2
±
0.2
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emiter open)
V
CBO
I
C
=
100
μ
A, I
E
=
0
I
C
=
500
μ
A, I
B
=
0
I
E
=
100
μ
A, I
C
=
0
V
CE
=
5 V, I
C
=
30 mA
I
C
=
50 mA, I
B
=
5 mA
I
C
=
50 mA, I
B
=
5 mA
V
CB
=
30 V, I
E
=
20 mA, f
=
200 MHz
V
CB
=
30 V, I
E
=
0, f
=
1 MHz
400
400
5
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emiter-base voltage (Collector open)
V
Forward current transfer ratio
h
FE
30
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
2.5
1.5
V
Base-emitter saturation voltage
V
Transition frequency
f
T
C
ob
70
MHz
Collector output capacitance
(Common base, input open circuited)
9
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1015 | TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
| 2SB1015A | TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
| 2SB1016A | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SB1017 | 2SB1017 |
| 2SB1018A | TRANSISTOR (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1011QRL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1012 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB1012(K) | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB1012K | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB1015 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。