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參數(shù)資料
| 型號： | 2SB1002 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 31K |
| 代理商： | 2SB1002 |
2SB1002
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
–70
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–6
V
Collector current
–1
A
Collector peak current
–1.5
A
Collector power dissipation
1
W
Junction temperature
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–70
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
–0.1
μ
A
μ
A
V
CB
= –50 V, I
E
= 0
V
EB
= –4 V, I
C
= 0
V
CE
= –2 V, I
C
= –0.1 A
I
C
= –1 A,
I
B
= –0.1 A (Pulse test)
I
C
= –1 A,
I
B
= –0.1 A (Pulse test)
V
CE
= –2 V,
I
C
= –10 mA (Pulse test)
V
= –10 V, I
E
= 0,
f = 1 MHz
Emitter cutoff current
—
—
–0.1
DC current transfer ratio
100
—
320
Collector to emitter saturation
voltage
—
—
–0.6
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
–1.2
V
Gain bandwidth product
f
T
—
150
—
MHz
Collector output capacitance
Cob
—
35
—
pF
Note:
Mark
1. The 2SB1002 is grouped by h
FE
as follows.
CH
CJ
h
FE
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1002CH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1002CJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1002CJTL-E | 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 50V 1A 4-Pin (3+Tab) UPAK T/R 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 50V 1A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,50V,1A,UPAK 制造商:Renesas 功能描述:Trans GP BJT PNP 50V 1A 4-Pin(3+Tab) UPAK T/R |
| 2SB1005 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220 -50V -4A 30W BCE |
| 2SB1007 | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
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