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參數(shù)資料
| 型號： | 2SB0950 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TV 6C 6#20 SKT PLUG |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F-A1, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 75K |
| 代理商： | 2SB0950 |
2SB0950, 2SB0950A
2
SJD00029BED
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
P
C
T
a
I
C
V
CE
I
C
V
BE
Safe operation area
R
th
t
0
160
40
120
80
0
10
20
30
40
50
(1)T
C
=Ta
(2)With a 100
×
100
×
2mm
Al heat sink
(3)With a 50
×
50
×
2mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
C
C
Ambient temperature T
a
(
°
C)
0
6
5
4
3
2
1
0
5
1
2
4
3
T
C
=25C
––2.0mA
–1.5mA
–1.0mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
I
B
=–3.0mA
C
C
Collector-emitter voltage V
CE
(V)
0
3.2
0.8
2.4
1.6
0
2
4
6
8
10
Base-emitter voltage V
BE
(V)
C
C
V
CE
=–3V
25C
T
C
=100C
–25C
0.01
0.01
0.1
1
10
100
0.1
1
10
C
C
Collector current I
C
(A)
I
C
/I
B
=250
25C
T
C
=100C
–25C
0.01
0.1
1
10
10
2
10
3
10
4
10
5
10
6
F
F
Collector current I
C
(A)
V
CE
=–3V
T
C
=100C
25C
–25C
0.1
1
10
100
1
10
10
2
10
3
10
4
C
o
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
C
C
Collector-emitter voltage V
CE
(V)
0.01
1
0.1
1
10
100
10
100
1
000
t=1ms
t=10ms
I
CP
I
C
2
2
Non repetitive pulse
T
C
=25C
DC
10
2
10
1
1
10
10
3
10
2
10
4
10
4
10
3
10
2
10
1
10
1
10
2
10
3
Time t (s)
T
t
°
C
(1)
(2)
(1)Without heat sink
(2)With a 100
×
100
×
2mm Al heat sink
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0950A | For Power Amplification And Switching |
| 2SB0951 | For midium-speed switching |
| 2SB0951A | For midium-speed switching |
| 2SB0952 | For Low-Voltage Switching |
| 2SB0952A | For Low-Voltage Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0950(2SB950) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0950A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Power Amplification And Switching |
| 2SB0950A(2SB950A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
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