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參數(shù)資料
| 型號： | 2SB0938AP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 242K |
| 代理商： | 2SB0938AP |
Power Transistors
1
Publication date: February 2004
SJD00019CED
2SB0938 (2SB938), 2SB0938A (2SB938A)
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1261, 2SD1261A
■ Features
High forward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0938
VCBO
60
V
(Emitter open)
2SB0938A
80
Collector-emitter voltage 2SB0938
VCEO
60
V
(Base open)
2SB0938A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power dissipation
PC
40
W
Ta
= 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0938
VCEO
IC = 30 mA, IB = 0
60
V
(Base open)
2SB0938A
80
Base-emitter voltage
VBE
VCE =
3 V,I
C =
3 A
2.5
V
Collector-base cutoff
2SB0938
ICBO
VCB = 60 V,IE = 0
200
A
current (Emitter open)
2SB0938A
VCB = 80 V,IE = 0
200
Collector-emitter cutoff
2SB0938
ICEO
VCE =
30 V,I
B = 0
500
A
current (Base open)
2SB0938A
VCE = 40 V,IB = 0
500
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V,IC = 0
2mA
Forward current transfer ratio
hFE1
VCE
= 3 V, I
C
= 0.5 A
1 000
hFE2 *
VCE = 3 V, IC = 3 A
2 000
10 000
Collector-emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 12 mA
2V
IC
= 5 A, I
B
= 20 mA
4
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
15
MHz
Turn-on time
ton
IC = 3 A,
0.3
s
Storage time
tstg
IB1
= 12 mA, I
B2
= 12 mA
2
s
Fall time
tf
VCC = 50 V
0.5
s
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
.5
14.4
±
0.5
Rank
Q
P
hFE1
2 000 to 5 000 4 000 to 10 000
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
B
C
E
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SB0941AP | 3 A, 80 V, PNP, Si, POWER TRANSISTOR |
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| 2SB0941P | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB0944Q | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0938AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-262VAR |
| 2SB0938P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-262VAR |
| 2SB0938Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-262VAR |
| 2SB0939 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Midium-Speed Power Switching |
| 2SB0939(2SB939) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
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