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參數(shù)資料
| 型號： | 2SB0937 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Amplification And Switching |
| 中文描述： | 2 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 75K |
| 代理商： | 2SB0937 |
2SB0937, 2SB0937A
2
SJD00018BED
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
P
C
T
a
I
C
V
CE
I
C
V
BE
0
160
40
120
80
0
10
20
30
40
50
(1)T
C
=Ta
(2)With a 50
×
50
×
2mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
C
C
Ambient temperature T
a
(
°
C)
0
1
2
3
5
4
0
5
1
2
4
3
T
C
=25C
I
B
=–2.0mA
–1.8mA
–0.6mA
–0.2mA
–0.1mA
4.0mA
C
C
Collector-emitter voltage V
CE
(V)
0
3.2
0.8
2.4
1.6
0
2
4
6
8
10
V
CE
=–4V
25C
T
C
=100C
–25C
Base-emitter voltage V
BE
(V)
C
C
0.01
0.01
0.1
1
10
100
0.1
1
10
C
C
Collector current I
C
(A)
I
C
/I
B
=250
25C
–25C
T
C
=100C
0.01
0.1
1
10
10
10
2
10
3
10
4
10
5
V
CE
=–4V
T
C
=100C
25C
–25C
F
F
Collector current I
C
(A)
0.1
1
10
100
1
10
10
2
10
3
10
4
C
o
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
C
C
Collector-emitter voltage V
CE
(V)
0.01
1
0.1
1
10
100
10
100
1
000
Non repetitive pulse
T
C
=25C
t=10ms
t=1ms
I
CP
I
C
t=300ms
2
2
Safe operation area
R
th
t
10
2
10
1
1
10
10
3
10
2
10
4
10
4
10
3
10
2
10
1
10
1
10
2
10
3
Time t (s)
T
t
°
C
(1)
(2)
(1)Without heat sink
(2)With a 50
×
50
×
2mm Al heat sink
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PDF描述 |
|---|---|
| 2SB0937A | For Power Amplification And Switching |
| 2SB0938 | For Power Amplification And Switching |
| 2SB0938A | For Power Amplification And Switching |
| 2SB0939 | For Midium-Speed Power Switching |
| 2SB0939A | For Midium-Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0937/2SB0937A(2SB937/2SB937A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0937. 2SB0937A (2SB937. 2SB937A) - PNP Transistor Darlington |
| 2SB0937A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Power Amplification And Switching |
| 2SB0937AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-262VAR |
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