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參數(shù)資料
| 型號(hào)： | 2SB0930Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 242K |
| 代理商： | 2SB0930Q |
2SB0930, 2SB0930A
2
SJD00012BED
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
0
160
40
120
80
0
10
20
30
40
50
(1)TC
= T
a
(2)With a 50 mm
× 50 mm
× 2 mm Al heat sink
(3)Without heat sink
(PC
= 1.3 W)
(1)
(3)
(2)
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
0
12
2
10
4
8
6
5
4
3
2
1
TC
= 25°C
100 mA
80 mA
60 mA
40 mA
20 mA
10 mA
8 mA
5 mA
IB
= 120 mA
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
1.2
0.8
0.4
0
2
4
6
10
8
TC
= 100°C
25°C
25
°C
VCE
= 4 V
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A)
0.01
0.1
1
10
100
0.1
1
10
IC / IB
= 10
25
°C
TC
= 100°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
0.01
0.1
1
10
1
10
VCE
= 4 V
TC
= 100°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
102
104
103
0.01
0.1
1
10
1
10
VCE
= 5 V
f
= 1 MHz
TC
= 25°C
Transition
frequency
f
T
(MHz)
Collector current I
C (A)
102
104
103
0.01
1
0.1
1
10
100
10
100
1000
Non repetitive pulse
TC
= 25°C
t
= 10 ms
t
= 1 ms
ICP
IC
t
= 300 ms
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
Safe operation area
Rth t
102
101
1
10
103
102
104
103
102
10
1
101
102
103
(1)
(2)
(1)Without heat sink
(2)With a 50 mm
× 50 mm × 2 mm Al heat sink
Time t (s)
Thermal
resistance
R
th
(°
C/W)
This product complies with the RoHS Directive (EU 2002/95/EC).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0931 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Power Switching |
| 2SB0931(2SB931) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0931P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SB0931Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
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