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參數(shù)資料
| 型號(hào)： | 2SB0788 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | For High Breakdown Voltage Low-noise Amplification |
| 中文描述： | 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | 2SB0788 |
Transistors
2SB0788
(2SB788)
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJC00055BED
For high breakdown voltage low-noise amplification
Complementary to 2SD0958 (2SD958)
■
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
120
120
7
20
50
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
mA
Peak collector current
I
CP
mA
Collector power dissipation
P
C
T
j
T
stg
400
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) The part number in the parenthesis shows conventional part number.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
CE
=
2 V, I
C
=
2 A
I
C
=
20 mA, I
B
=
2 mA
V
CE
=
40 V, I
C
=
1 mA, G
V
=
80 dB
R
g
=
100 k
, Function
=
FLAT
120
120
7
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
V
Collector-base cutoff current (Emitter open)
100
1
nA
Collector-emitter cutoff current (Base open)
I
CEO
μ
A
Forward current transfer ratio
*
h
FE
180
520
Collector-emitter saturation voltage
V
CE(sat)
NV
0.6
150
V
Noise voltage
mV
Rank
Q
R
h
FE
180 to 360
260 to 520
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0789 | Silicon PNP epitaxial planar type |
| 2SB0789A | Silicon PNP epitaxial planar type |
| 2SB0790 | For Low-Frequency Output Application |
| 2SB0792A | Silicon PNP epitaxial planer type |
| 2SB792 | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0788(2SB788) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號(hào)デバイス － 小信號(hào)トランジスタ － 汎用低周波増幅 |
| 2SB0788R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-71 |
| 2SB0788S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-71 |
| 2SB0788T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-71 |
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