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參數(shù)資料
| 型號(hào)： | 2SB0643 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | For low-frequency general amplification |
| 中文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 73K |
| 代理商： | 2SB0643 |
Transistors
2SB0643, 2SB0644
(2SB643, 2SB644)
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJC00046CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
(Emitter open)
2SB0643
V
CBO
I
C
=
10
μ
A, I
E
=
0
30
60
25
50
7
V
2SB0644
Collector-emitter voltage
(Base open)
2SB0643
V
CEO
I
C
=
2 mA, I
B
=
0
V
2SB0644
Emitter-base voltage (Collector open)
V
EBO
I
CBO
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
CE
=
10 V, I
C
=
10 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
Collector-base cutoff current (Emitter open)
0.1
1
μ
A
μ
A
Collector-Emitter cutoff current (Base open)
Forward current transfer ratio
*1
I
CEO
h
FE1
*2
h
FE2
85
340
40
90
Collector-emitter saturation voltage
*1
V
CE(sat)
0.35
0.6
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
6
15
pF
For low-frequency general amplification
■
Features
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0643
V
CBO
30
60
25
50
7
0.5
1
V
2SB0644
Collector-emitter voltage
(Base open)
2SB0643
V
CEO
V
2SB0644
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
600
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0644 | For low-frequency general amplification |
| 2SB0709A | Silicon PNP epitaxial planar type |
| 2SB0710 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB710 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0710A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0643(2SB643) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0643/2SB0644(2SB643/2SB644) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0643. 2SB0644 (2SB643. 2SB644) - PNP Transistor |
| 2SB0643Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SB0643R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | SC-71 |
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