
Transistors
Publication date : October 2008
SJC00044DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0621
Silicon PNP epitaxial planar type
For low-frequency driver amplication
Complementary to SD0592
Features
Low collector-emitter saturation voltage VCE(sat)
High transition frequency fT
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–30
V
Collector-emitter voltage (Base open)
VCEO
–25
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
–1
A
Peak collector current
ICP
–1.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 mA, IE = 0
–30
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–25
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 mA, IC = 0
–5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
– 0.1
m
A
Forward current transfer ratio
hFE1 *
VCE = –10 V, IC = –500 mA
85
340
hFE2
VCE = –5 V, IC = –1 A
50
Collector-emitter saturation voltage
VCE(sat) IC = –500 mA, IB = –50 mA
– 0.2
– 0.4
V
Base-emitter saturation voltage
VBE(sat) IC = –500 mA, IB = –50 mA
– 0.85
–1.2
V
Transition frequency
fT
VCB = –10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = –10 V, IE = 0, f = 1 MHz
20
30
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classication
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en