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參數(shù)資料
| 型號： | 2SAR522UBTL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UMT3F, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 166K |
| 代理商： | 2SAR522UBTL |
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
General purpose transistor(-20V,-0.2A)
2SAR522M / 2SAR522EB / 2SAR522UB
Structure
Dimensions (Unit : mm)
PNP silicon epitaxial planar transistor
Features
Complements the 2SCR522M / 2SCR522EB / 2SCR522UB.
Applications
Switch, LED driver
Packaging specifications
Packaging Type
Code
Taping
Basic ordering
unit (pieces)
T2L
8000
Taping
TL
3000
Taping
TL
3000
2SAR522M
2SAR522EB
2SAR522UB
Package
VMT3
EMT3F
UMT3F
Type
Absolute maximum ratings (Ta=25
C)
Inner circuit
Symbol
Limits
Unit
VCBO
20
V
20
V
VCEO
VEBO
5
mA
400
IC
ICP
mA
200
Tj
150
°C
Tstg
55 to +150
°C
PD
200
150
mW
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power
dissipation
1 Pw=1mS Single pulse
2 Each terminal mounted on a recommended land
Parameter
2SAR522M,2SAR522EB
2SAR522UB
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
20
5
350
0.12
3
0.1
0.30
V
μA
V
MHz
pF
IC
=
50μA
IC
=
1mA
IE
=
50μA
VCB
=
20V
VEB
=
5V
IC
=
100mA, IB= 10mA
hFE
120
560
VCE
=
10V, IE=10mA, f=100MHz
VCE
=
2V, IC= 1mA
VCB
=
10V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current gain
VMT3
EMT3F
(1)
(2)
(3)
UMT3F
2.0
0.32
0.65
1.3
2.1
1.25
0.425
(1)
(2)
(3)
0.9
0.53
0.13
Abbreviated symbol : PC
(1)
(3)
(2)
(1) Base
(2) Emitter
(3) Collector
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SAR523EB | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor(-50V,-0.1A) |
| 2SAR523EBTL | 制造商:ROHM Semiconductor 功能描述: |
| 2SAR523M | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor(-50V,-0.1A) |
| 2SAR523MT2L | 功能描述:TRANS PNP 50V 0.1A VMT3 制造商:rohm semiconductor 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:400mV @ 5mA，50mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:120 @ 1mA，6V 功率 - 最大值:150mW 頻率 - 躍遷:300MHz 安裝類型:表面貼裝 封裝/外殼:SOT-723 供應商器件封裝:VMT3 標準包裝:1 |
| 2SAR523UB | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor(-50V,-0.1A) |