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參數(shù)資料
| 型號(hào)： | 2SA838 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359) |
| 中文描述： | 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SA838 |
2
Transistor
2SA838
0
200
160
40
120
80
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–30
–25
–20
–15
–10
–5
Ta=25C
I
B
=–250
μ
A
–200
μ
A
–150
μ
A
–100
μ
A
–50
μ
A
Collector to emitter voltage V
CE
(V)
C
C
– 0.1
–1
–10
–100
– 0.3
Collector current I
C
(mA)
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
Ta=75C
25C
–25C
C
C
0
–1
–10
–100
– 0.3
Collector current I
C
(mA)
–3
–30
–120
–100
–80
–60
–40
–20
V
CE
=–10V
Ta=75C
25C
–25C
F
F
0
Collector to base voltage V
CB
(V)
–1
–10
–100
– 0.3
–3
–30
6
5
4
3
2
1
f=1MHz
I
=0
Ta=25C
C
o
–1
–3
–10
–30
–100
0
5
4
3
2
1
I
=–1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
C
r
0.1
1
10
100
0.3
Emitter current I
E
(mA)
3
30
0
600
500
400
300
200
100
V
=–10V
Ta=25C
T
T
0
–1
–10
–100
– 0.3
Collector current I
C
(mA)
–3
–30
24
20
16
12
8
4
V
=–10V
f=100MHz
Ta=25C
P
0.1
0.3
1
3
10
0
5
4
3
2
1
V
=–10V
f=100MHz
Ta=25C
Emitter current I
E
(mA)
N
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
C
re
— V
CE
f
T
— I
E
PG — I
C
NF — I
E
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PDF描述 |
|---|---|
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| 2SA886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) |
| 2SA0900 | For low-frequency Power amplification Complementary |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA838BC | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA839 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon PNP Power Transistors |
| 2SA841 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON PNP EPITAXIAL TRANSISTOR(PCT PROCESS) |
| 2SA842 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92VAR -40V -.05A .2W ECB |
| 2SA843 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -200V -.05A 20W BCE |
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