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參數(shù)資料
| 型號： | 2SA812-M7 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MINI MOLD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 236K |
| 代理商： | 2SA812-M7 |
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SILICON TRANSISTOR
2SA812
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17119EJ4V0DS00 (4th edition)
Date Published November 2005 NS CP(K)
Printed in Japan
c
1984
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
Complementary to 2SC1623
High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)
High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cut-off Current
ICBO
0.1
μA
VCB =
60 V, IE = 0 A
Emitter Cut-off Current
IEBO
0.1
μA
VEB =
5.0 V, IC = 0 A
DC Current Gain
hFE
90
200
600
VCE =
6.0 V, IC = 1.0 mA
Note
Collector Saturation Voltage
VCE(sat)
0.18
0.3
V
IC =
100 mA, IB = 10 mA
Base to Emitter Voltage
VBE
0.58
0.62
0.68
V
VCE = 6.0 V, IC =
1.0 mA
Gain Bandwidth Product
fT
180
MHz
VCE =
6.0 V, IE = 10 mA
Output Capacitance
Cob
4.5
pF
VCB =
10 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW
≤ 350
μs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking
M4
M5
M6
M7
hFE
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
2.8 ± 0.2
1.5 TYP.
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
TYP.
0.95
TYP.
2.9
±
0.2
0.4
+0.1
–0.05
2
1
3
0.3
TYP.
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1. Emitter
2. Base
3. Collector
<R>
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA812-M5 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA812-M7 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA812M6-TP | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA812-TP | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA812M7-TP | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA812-M7(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA812-T1B | 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 2SA812-T1B-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA812-T1B-A(M6) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA812-T1B-A(M7) | 制造商:Renesas Electronics 功能描述:PNP |
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