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參數(shù)資料
| 型號(hào)： | 2SA743AB |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SA743AB |
2SA743, 2SA743A
2
Electrical Characteristics
(Ta = 25°C)
2SA743
2SA743A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–50
—
—
–80
—
—
V
I
C
= –1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
—
—
–80
—
—
V
I
C
= –10 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–4
—
—
–4
—
—
V
I
E
= –1 mA, I
C
= 0
Collector cutoff current
I
CER
—
—
–20
—
—
—
μ
A
V
CE
= –50 V, R
BE
= 1
k
I
CER
—
—
—
—
—
–20
V
CE
= –80 V, R
BE
= 1
k
DC current tarnsfer ratio h
FE
*
1
60
120
200
60
120
200
V
= –4 V, I
C
= –50
mA
h
FE
20
—
—
20
—
—
V
= –4 V, I
C
= –1 A
(pulse)
Base to emitter voltage
V
BE
—
–0.65 –1.0
—
–0.65 1.0
V
V
= –4 V, I
C
= –50
mA
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.75 –1.5
—
–0.75 –1.5
V
I
C
= –1 A, I
B
= –0.1 A
Gain bandwidth product f
T
—
120
—
—
120
—
MHz
V
= –4 V, I
C
= –30
mA
Note:
1. The 2SA743 and 2SA743A is grouped by h
FE
as follows.
B
C
60 to 120
100 to 200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA748R | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SA743AC | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA743B | BJT |
| 2SA743C | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA748P | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA743AC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SA743B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SA743C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SA744 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA745 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistor |
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