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參數資料
| 型號： | 2SA2154MFV-GR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-1L1A, VESM, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 2SA2154MFV-GR |
2SA2154MFV
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154MFV
General-Purpose Amplifier Applications
High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE
: hFE = 120~400
Complementary to 2SC6026MFV
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm
× 25.4 mm × 1.6mm)
Mount Pad Dimensions (Reference)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015 g (typ.)
VESM
1.BASE
2.EMITTER
3.COLLECTOR
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
150*
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
1
2
3
0.80 ± 0.05
0.
32
±
0.
05
0.
22
±
0.
05
0.
8±
0.
05
0.
4
1.2 ± 0.05
1.
2±
0.
05
0.
13
±
0.0
5
0.
5±
0.
05
1
0.4
0.5
0.45
0.4
1.15
0.45
0.4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA2154MFV-GR(TPL3 | 功能描述:兩極晶體管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2154MFV-GR(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 50V 0.15A 3-Pin VESM T/R 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM |
| 2SA2154MFV-Y | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2154MFV-Y(TPL3) | 功能描述:兩極晶體管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2154-Y | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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