參數(shù)資料
型號: 2SA2121-O
元件分類: 功率晶體管
英文描述: 15 A, 200 V, PNP, Si, POWER TRANSISTOR
文件頁數(shù): 1/4頁
文件大?。?/td> 139K
代理商: 2SA2121-O
2SA2121
2006-11-16
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2121
Power Amplifier Applications
Complementary to 2SC5949
Recommended for audio frequency amplifier output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
200
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
PC
220
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba
Semiconductor
Reliability
Handbook
(“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA2121-O(Q) 功能描述:兩極晶體管 - BJT PNP 200V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA2121-R(Q) 功能描述:兩極晶體管 - BJT Transistor PNP 200V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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