參數(shù)資料
型號: 2SA2113
廠商: Rohm CO.,LTD.
英文描述: Medium power transistor (−30V, −2A)
文件頁數(shù): 2/4頁
文件大?。?/td> 44K
代理商: 2SA2113
2SA2113
Transistor
!
Electrical characteristics
(Ta=25
°
C)
2/3
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
Ton
Tstg
Tf
Min.
30
30
6
120
Typ. Max.
200
400
350
25
25
100
20
Unit
V
V
V
μ
A
μ
A
mV
MHz
pF
ns
ns
ns
Conditions
I
C
=
100
μ
A
I
C
=
1mA
I
E
=
100
μ
A
V
CB
=
20V
V
EB
=
4V
I
C
=
1A, I
B
=
0.1A
V
CE
=
2V, I
C
=
100mA
V
CE
=
10V, I
E
=
100mA, f
=
10MHz
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
I
C
=
2A
I
B1
=
200mA
I
B2
=
200mA
V
CC
25V
2
1.0
1.0
390
1
1
1 Non repetitive pulse
2 See switching characteristics measurement circuit
!
h
FE
RANK
Turn-on time
Storage time
Fall time
Transition frequency
Collector output capacitance
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector-base breakdown voltage
Q
R
120
270
180
390
!
Electrical characteristic curves
0.01
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.1
1
10
100
Fig.1 Safe Operating Area
0.001
0.01
0.1
1
C
C
10
100ms
DC
10ms
1ms
Single
non repetitive
Pulse
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.2 Switching Time
10
100
S
1000
Ta
=
25
°
C
V
CC
=
25V
I
C
/I
B
=
10/1
Tstg
Tf
Ton
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.3 DC Current Gain vs.
Collector Current (
Ι
)
1
10
100
D
F
1000
V
CE
=
2V
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
125
°
C
1
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC Current Gain vs.
Collector Current (
ΙΙ
)
10
100
D
F
1000
Ta
=
25
°
C
V
CE
=
5V
V
CE
=
3V
V
CE
=
2V
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (
Ι
)
0.01
0.1
1
C
V
C
10
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
125
°
C
I
C
/I
B
=
10/1
I
C
/I
B
=
10/1
Ta
=
25
°
C
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-Emitter Saturation
Voltage vs.
Collector Current (
ΙΙ
)
0.01
0.1
1
C
V
C
10
I
C
/I
B
=
20/1
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