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參數(shù)資料
| 型號： | 2SA2112 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | High Current Switching Applications |
| 中文描述： | 高電流開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 28K |
| 代理商： | 2SA2112 |
2SA2112
No.7379-1/4
Applications
DC-DC converter, relay drivers, lamp drivers,
motor drivers, strobes.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
V
A
A
mA
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
--50
--50
--50
--6
--3
--6
--600
1
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE
fT
VCB=--40V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--100mA
VCE=--10V, IC=--500mA
--1
--1
μ
A
μ
A
200
560
390
MHz
Continued on next page.
PNP Epitaxial Planar Silicon Transistors
Ordering number : ENN7379
2SA2112
N2503 TS IM TA-3749
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
High Current Switching Applications
Package Dimensions
unit : mm
2064A
[2SA2112]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
6.9
0.6
0.5
4
1
1
0.9
2.5
1.45
1.0
0.45
4
1
2.54
2.54
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2112_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High Current Switching Applications |
| 2SA2112-AN | 功能描述:兩極晶體管 - BJT DC-DC CONVERTER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2113 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium power transistor (−30V, −2A) |
| 2SA2118 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Power Transistors Silicon PNP epitaxial planar type |
| 2SA2119K | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low frequency transistor |
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