參數(shù)資料
型號(hào)： 2SA2097
元件分類： 小信號(hào)晶體管
英文描述： 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： 2-7J1A, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 143K
代理商： 2SA2097
2SA2097
2005-02-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097
High-Speed Swtching Applications
DC-DC Converter Applications
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation: VCE (sat) = 0.27 V (max)
High-speed switching: tf = 55 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
5
Collector current
Pulse
ICP
10
A
Base current
IB
0.5
A
Ta
= 25°C
1
Collector power
dissipation
Tc
= 25°C
Pc
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
VCE = 2 V, IC = 0.5 A
200
500
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
100
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 53 mA
0.27
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 53 mA
1.10
V
Rise time
tr
63
Storage time
tstg
280
Switching time
Fall time
tf
See Figure 1. VCC 24 V, RL =
15
IB1 = IB2 = 53 mA
55
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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2SA2110 0.5 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-126
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