參數(shù)資料
型號(hào): 2SA2066
元件分類(lèi): 小信號(hào)晶體管
英文描述: 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, 2-5K1A, SC-62, 3 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 155K
代理商: 2SA2066
2SA2066
2009-12-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2066
High-Speed Switching Applications
DC-DC Converter Applications
High DC current gain: hFE = 200 to 500 (IC = 0.2 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max)
High-speed switching: tf = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
7
V
DC
IC
2.0
Collector current
Pulse
ICP
3.5
A
Base current
IB
200
mA
t = 10 s
2.0
Collector power
dissipation
DC
PC
(Note 1)
1.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm
2
)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
相關(guān)PDF資料
PDF描述
2SA2071T100 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2078G 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2090TLQ 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2090TL 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2099 10 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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