- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33325 > 2SA2059 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SA2059 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-5K1A, SC-62, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 149K |
| 代理商： | 2SA2059 |
2SA2059
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2059
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max)
High-speed switching: tf = 40 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
7
V
DC
IC
3.0
Collector current
Pulse
ICP
5.0
A
Base current
IB
300
mA
DC
1.0
Collector power
dissipation
t = 10 s
PC
(Note)
2.5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
―
V
hFE (1)
VCE = 2 V, IC = 0.5 A
200
―
500
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
100
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 53 mA
―
0.19
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 53 mA
―
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
28
―
pF
Rise time
tr
―
70
―
Storage time
tstg
―
150
―
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ≈ 12 V, RL = 7.5
IB1 = IB2 = 53.3 mA
―
40
―
ns
Unit: mm
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA2059 | 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2060 | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2060 | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2061 | 2500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2065 | 1500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2059(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA2059(TE12L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 20V 3A hfe200-500 40ns PW |
| 2SA2059_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 2SA205H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General Purpose Amplifier |
| 2SA205S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General Purpose Amplifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。